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Datasheet IRFI640 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
6 | IRFI640 | 200V N-Channel MOSFET IRFW640B / IRFI640B
November 2001
IRFW640B / IRFI640B
200V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize o |
Fairchild Semiconductor |
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5 | IRFI640A | Power MOSFET ( Transistor ) Advanced Power MOSFET
IRFW/I640A
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µ A (Max.) @ VDS = 200V Lower RDS(ON) : 0.144 Ω (Typ.)
Absolute Maximum Ratings
Symbol VDSS I |
Fairchild Semiconductor |
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4 | IRFI640B | 200V N-Channel MOSFET IRFW640B / IRFI640B
November 2001
IRFW640B / IRFI640B
200V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize o |
Fairchild Semiconductor |
|
3 | IRFI640B | N-Channel MOSFET IRFW640B / IRFI640B
November 2001
IRFW640B / IRFI640B
200V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize o |
Fairchild Semiconductor |
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Número de pieza | Descripción | Fabricantes | |
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Sanken |
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