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Datasheet IRFI634 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 5 | IRFI634 | 250V N-Channel MOSFET IRFW634B / IRFI634B
November 2001
IRFW634B / IRFI634B
250V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize o |
 Fairchild Semiconductor |
 |
| 4 | IRFI634A | Power MOSFET ( Transistor ) $GYDQFHG 3RZHU 026)(7
IRFW/I634A
FEATURES
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 250V ♦ Lower RDS(ON): 0.327Ω(Typ.)
Absolute Maximum |
Fairchild Semiconductor |
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| 3 | IRFI634B | 250V N-Channel MOSFET IRFW634B / IRFI634B
November 2001
IRFW634B / IRFI634B
250V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize o |
Fairchild Semiconductor |
|
| 2 | IRFI634B | N-Channel MOSFET IRFW634B / IRFI634B
November 2001
IRFW634B / IRFI634B
250V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize o |
Fairchild Semiconductor |
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