No | Part number | Description ( Function ) | Manufacturers | |
1 | IRFI614A | Power MOSFET ( Transistor ) $GYDQFHG 3RZHU 026)(7 IRFW/I614A FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 250V ♦ Lower RDS(ON): 1.393Ω (Typ.) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characterist |
Fairchild Semiconductor |
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Part No | Description ( Function) | Manufacturers | |
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IRFI614B | N-Channel MOSFET IRFW614B / IRFI614B November 2001 IRFW614B / IRFI614B 250V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially ta |
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