Datasheet IRFH5306PBF Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	IRFH5306PBF	HEXFET Power MOSFET IRFH5306PbF HEXFET® Power MOSFET V DS R DS(on) max (@VGS = 10V) 30 8.1 7.8 1.4 44 V mΩ nC Ω A PQFN 5X6 mm Qg (typical) R G (typical) ID (@Tc(Bottom) = 25°C) Applications • Control MOSFET for buck converters Features and Benefits Features Low charge (typical 7.8nC) Low thermal resistance	International Rectifier

IRFH5306 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
IRFH5306TRPBF	HEXFET Power MOSFET IRFH5306PbF HEXFET® Power MOSFET V DS R DS(on) max (@VGS = 10V) 30 8.1 7.8 1.4 44 V mΩ nC Ω A PQFN 5X6 mm Qg (typical) R G (typical) ID (@Tc(Bottom) = 25°C) Applications • Control MOSFET for buck converters Features and Benefits Features Low charge (typical 7.8nC) Lo	International Rectifier
IRFH5306PBF	HEXFET Power MOSFET IRFH5306PbF HEXFET® Power MOSFET V DS R DS(on) max (@VGS = 10V) 30 8.1 7.8 1.4 44 V mΩ nC Ω A PQFN 5X6 mm Qg (typical) R G (typical) ID (@Tc(Bottom) = 25°C) Applications • Control MOSFET for buck converters Features and Benefits Features Low charge (typical 7.8nC) Lo	International Rectifier

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Número de pieza	Descripción	Fabricantes	PDF
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