No | Part number | Description ( Function ) | Manufacturers | |
1 | IRFG5210 | Combination 2N-2P-CHANNEL HEXFET MOSFET TECHNOLOGY PD - 91664B IRFG5210 POWER MOSFET 200V, Combination 2N-2P-CHANNEL THRU-HOLE (MO-036AB) HEXFET MOSFET TECHNOLOGY ® Product Summary Part Number IRFG5210 IRFG5210 RDS(on) 1.6Ω 1.6Ω ID 0.68A -0.68A CHANNEL N P HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design ach |
International Rectifier |
0  1  2  3  4  5  6  7  8 9 |
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