No | Part number | Description ( Function ) | Manufacturers | |
3 | IRFF420 | N-CHANNEL POWER MOSFET IRFF420 MECHANICAL DATA Dimensions in mm (inches) 8 .8 9 (0 .3 5 ) 9 .4 0 (0 .3 7 ) N–CHANNEL POWER MOSFET BVDSS ID(cont) RDS(on) 500V 1.5 3.0W 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) 6 .1 0 (0 .2 4 0 ) 6 .6 0 (0 .2 6 0 ) 1 2 .7 0 (0 .5 0 0 ) m in . 0 .8 9 m a x . (0 .0 3 5 ) 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) d ia . 5 .0 8 (0 .2 0 0 ) ty p . 0 .6 6 (0 .0 2 6 ) 1 . |
Seme LAB |
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2 | IRFF420 | 1.6A/ 500V/ 3.000 Ohm/ N-Channel Power MOSFET IRFF420 Data Sheet March 1999 File Number 1891.4 1.6A, 500V, 3.000 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications su |
Intersil Corporation |
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1 | IRFF420 | HEXFET TRANSISTORS PD - 90429D IRFF420 JANTX2N6794 REPETITIVE AVALANCHE AND dv/dt RATED JANTXV2N6794 HEXFET®TRANSISTORS REF:MIL-PRF-19500/555 THRU-HOLE (TO-205AF) 500V, N-CHANNEL Product Summary Part Number BVDSS IRFF420 500V RDS(on) 3.0Ω ID 1.5A The HEXFET®technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and |
International Rectifier |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |