No | Part number | Description ( Function ) | Manufacturers | |
3 | IRFF130 | 8.0A/ 100V/ 0.180 Ohm/ N-Channel Power MOSFET IRFF130 Data Sheet March 1999 File Number 1564.3 8.0A, 100V, 0.180 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications su |
Intersil Corporation |
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2 | IRFF130 | Trans MOSFET N-CH 100V 8A 3-Pin TO-39 |
New Jersey Semiconductor |
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1 | IRFF130 | HEXFET TRANSISTORS PD - 90430C REPETITIVE AVALANCHE AND dv/dt RATED HEXFETTRANSISTORS THRU-HOLE (TO-205AF) Product Summary Part Number BVDSS IRFF130 100V RDS(on) 0.18Ω ID 8.0A IRFF130 JANTX2N6796 JANTXV2N6796 REF:MIL-PRF-19500/557 100V, N-CHANNEL The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and un |
International Rectifier |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |