IRFE9230 PDF Datasheet

IRFE9230 MECHANICAL DATA Dimensions in mm (inches) P–CHANNEL POWER MOSFET ≈ 2.16 (0.085) 1.27 (0.050) 1.07 (0.040) 9.14 (0.360) 8.64 (0.340) 12 13 14 15 16 1.39 (0.055) 1.02 (0.040) 11 7.62 (0.300) 7.12 (0.280) 17 18 1 2 0.76 (0.030) 0.51 (0.020) 10 9 8 7 6 5 4 3 1.65 (0.065) 1.40 (0.055) 0.33 (0.013) Rad. 0.08 (0.003) VDSS ID(cont) RDS(on) FEATURES • SURFA

12-Bit, 170 MSPS/210 MSPS/250 MSPS, 1.8 V Analog-to-Digital Converter AD9230 FEATURES SNR = 64.9 dBFS @ fIN up to 70 MHz @ 250 MSPS ENOB of 10.4 @ fIN up to 70 MHz @ 250 MSPS (−1.0 dBFS) SFDR = −79 dBc @ fIN up to 70 MHz @ 250 MSPS (−1.0 dBFS) Excellent linearity DNL = ±0

BYD Microelectronics Co., Ltd. General Description The BF92301P uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for used as a load switch or in PWM applications. Features z VDS (V) = -20V z ID = -2.8A z Low on-state resist

BYD Microelectronics Co., Ltd. General Description The BF92302N uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for used as a load switch or in PWM applications. Features z VDS (V) = 20V z ID = 3 A z Low on-state resistanc

BUK9230-100B TrenchMOS™ logic level FET M3D300 Rev. 01 — 22 January 2004 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS™ technology.

BUK9230-55A TrenchMOS™ logic level FET Rev. 03 — 30 January 2001 M3D300 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology, featuring very low on-state resi