| No | Part number | Description ( Function ) | Manufacturers | |
| 4 | IRFD9110 | 0.7A/ 100V/ 1.200 Ohm/ P-Channel Power MOSFET IRFD9110 Data Sheet July 1999 File Number 2215.3 0.7A, 100V, 1.200 Ohm, P-Channel Power MOSFET This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications su |
 Intersil Corporation |
|
| 3 | IRFD9110 | Power MOSFET(Vdss=-100V/ Rds(on)=1.2ohm/ Id=-0.70A) |
 International Rectifier |
|
| 2 | IRFD9110 | 0.7A/ 100V/ 1.200 Ohm/ P-Channel Power MOSFET IRFD9110 Data Sheet January 2002 0.7A, 100V, 1.200 Ohm, P-Channel Power MOSFET This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching |
 Fairchild Semiconductor |
|
| 1 | IRFD9110PbF | Power MOSFET ( Transistor ) Lead-Free PD- 95921 IRFD9110PbF www.irf.com 1 10/28/04 IRFD9110PbF 2 www.irf.com IRFD9110PbF www.irf.com 3 IRFD9110PbF 4 www.irf.com IRFD9110PbF www.irf.com 5 IRFD9110PbF 6 www.irf.com IRFD9110PbF Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer - + - - |
International Rectifier |
|
List of most widely used semiconductors
| Part Number | Function | Manufacturers | |
| 1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
 Vishay |
|
| LM317 | This is a popular adjustable voltage regulator. |
 ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |
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