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Datasheet IRFD320 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | IRFD320 | Power MOSFET ( Transistor ) www.vishay.com
IRFD320, SiHFD320
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
400 VGS = 10 V
20 3.3 11 Single
1.8
D
HVMDIP
S G
D
G
S N-Channel MOSFET
FEATURES • Dynamic dV/dt rating
• Repetitive avalanche rated • |
 Vishay |
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| 2 | IRFD320 | 0.5A/ 400V/ 1.800 Ohm/ N-Channel Power MOSFET IRFD320
Data Sheet July 1999 File Number
2325.4
0.5A, 400V, 1.800 Ohm, N-Channel Power MOSFET
This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche |
 Intersil Corporation |
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| 1 | IRFD320 | Power MOSFET(Vdss=400V/ Rds(on)=1.8ohm/ Id=0.49A) Previous Datasheet
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PD -9.1226
IRFD320
HEXFET® Power MOSFET
Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable Fast Switching Ease of paralleling Simple Drive Requirements Description
Third Generation HEXFETs from International Rectifier p |
 International Rectifier |
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