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Datasheet IRFD310 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | IRFD310 | 0.4A/ 400V/ 3.600 Ohm/ N-Channel Power MOSFET IRFD310
Data Sheet July 1999 File Number
2324.4
0.4A, 400V, 3.600 Ohm, N-Channel Power MOSFET
These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdow |
 Intersil Corporation |
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| 1 | IRFD310 | Power MOSFET(Vdss=400V/ Rds(on)=3.6ohm/ Id=0.35A) Previous Datasheet
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PD -9.1225
IRFD310
HEXFET® Power MOSFET
Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable Fast Switching Ease of paralleling Simple Drive Requirements Description
Third Generation HEXFETs from International Rectifier p |
 International Rectifier |
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