No | Part number | Description ( Function ) | Manufacturers | |
3 | IRFD210 | 0.6A/ 200V/ 1.500 Ohm/ N-Channel Power MOSFET IRFD210 Data Sheet July 1999 File Number 2316.3 0.6A, 200V, 1.500 Ohm, N-Channel Power MOSFET This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulato |
Intersil Corporation |
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2 | IRFD210 | Power MOSFET(Vdss=200V/ Rds(on)=1.5ohm/ Id=0.60A) |
International Rectifier |
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1 | IRFD210PBF | HEXFET Power MOSFET PD- 95924 IRFD210PbF Lead-Free www.irf.com 1 10/27/04 IRFD210PbF 2 www.irf.com IRFD210PbF www.irf.com 3 IRFD210PbF 4 www.irf.com IRFD210PbF www.irf.com 5 IRFD210PbF 6 www.irf.com IRFD210PbF Peak Diode Recovery dv/dt Test Circuit + |
International Rectifier |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |