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Datasheet IRFD120 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 8 | IRFD120 | Power MOSFET ( Transistor ) Power MOSFET
IRFD120, SiHFD120
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
100 VGS = 10 V
16 4.4 7.7 Single
D
0.27
HVMDIP
S G
D
G
S N-Channel MOSFET
ORDERING INFORMATION
Package Lead (Pb)-free
SnPb
FEATURES • Dynamic dV/dt Rating |
 Vishay |
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| 7 | IRFD120 | 1.3A/ 100V/ 0.300 Ohm/ N-Channel Power MOSFET IRFD120
Data Sheet July 1999 File Number
2315.3
1.3A, 100V, 0.300 Ohm, N-Channel Power MOSFET
This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are N-Channel enhancement mode silicon gate powe |
 Intersil Corporation |
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| 6 | IRFD120 | Power MOSFET(Vdss=100V/ Rds(on)=0.27ohm/ Id=1.3A) |
 International Rectifier |
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| 5 | IRFD120 | N-Channel Power MOSFET / Transistor IRFD120
Data Sheet January 2002
1.3A, 100V, 0.300 Ohm, N-Channel Power MOSFET
This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are N-Channel enhancement mode silicon gate power field effect |
 Fairchild Semiconductor |
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nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
 Sanken |
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