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IRFBC40LC PDF Datasheet

The IRFBC40LC is Power MOSFET ( Transistor ). It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 IRFBC40LC
Power MOSFET ( Transistor )

International Rectifier
International Rectifier
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Recommended search results related to IRFBC40LC

Part No Description ( Function) Manufacturers PDF
IRFBC40   N - CHANNEL 600V - 1.0ohm - 6.2 A - TO-220 PowerMESH] MOSFET

® IRFBC40 N - CHANNEL 600V - 1.0 Ω - 6.2 A - TO-220 PowerMESH™ MOSFET TYPE IRFBC40 s s s s s V DSS 600 V R DS(on) < 1.2 Ω ID 6.2 A TYPICAL RDS(on) = 1.0 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 2

STMicroelectronics
STMicroelectronics
datasheet pdf
IRFBC40   6.2A/ 600V/ 1.200 Ohm/ N-Channel Power MOSFET

IRFBC40 Data Sheet July 1999 File Number 2157.3 6.2A, 600V, 1.200 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the

Intersil Corporation
Intersil Corporation
datasheet pdf
IRFBC40   6.2A and 5.4A/ 600V/ 1.2 and 1.6 Ohm/ N-Channel Power MOSFETs

Semiconductor IRFBC40, IRFBC42 6.2A and 5.4A, 600V, 1.2 and 1.6 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified

Harris Corporation
Harris Corporation
datasheet pdf
IRFBC40   Power MOSFET(Vdss=600V/ Rds(on)max=1.2ohm/ Id=6.2A)

International Rectifier
International Rectifier
datasheet pdf
IRFBC40   N-Channel Power MOSFET / Transistor

IRFBC40 Data Sheet January 2002 6.2A, 600V, 1.200 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avala

Fairchild Semiconductor
Fairchild Semiconductor
datasheet pdf

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Vishay Semiconductor
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