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Datasheet IRFBC30 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 14 | IRFBC30 | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRFBC30
FEATURES ·Lower Input Capacitance ·Improved Gate Charge ·Extended Safe Operating Area ·Rugged Gate Oxide Technology
DESCRIPTION ·High current ,high speed switching ·Switch mode power supplies ·DC-AC co |
 Inchange Semiconductor |
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| 13 | IRFBC30 | N - CHANNEL 600V - 1.8 ohm - 3.6A - TO-220 PowerMESH]II MOSFET ®
IRFBC30
N - CHANNEL 600V - 1.8 Ω - 3.6A - TO-220 PowerMESH ™ ΙΙ MOSFET
TYPE IRFBC30
s s s s s
V DSS 600 V
R DS(on) < 2.2 Ω
ID 3.6 A
TYPICAL RDS(on) = 1.8 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED
3 1 2
DESCRIPTIO |
 STMicroelectronics |
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| 12 | IRFBC30 | Power MOSFET(Vdss=600V/ Rds(on)=2.2ohm/ Id=3.6A) |
 International Rectifier |
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| 11 | IRFBC30 | Power MOSFET ( Transistor ) Power MOSFET
IRFBC30, SiHFBC30
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
600 VGS = 10 V
31 4.6 17 Single
D
TO-220AB
2.2
G
S D G
S N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
FEATURES • Dynamic dV/dt Rati |
 Vishay |
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