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Datasheet IRFB42N20D Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
4 IRFB42N20D   Power MOSFET(Vdss=200V/ Rds(on)max=0.055ohm/ Id=44A)

PD- 94208 SMPS MOSFET IRFB42N20D HEXFET® Power MOSFET Applications High frequency DC-DC converters l Motor Control l Uninterrutible Power Supplies l VDSS 200V RDS(on) max 0.055Ω ID 44A Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Includin
International Rectifier
International Rectifier
datasheet IRFB42N20D pdf
3 IRFB42N20D   Power MOSFET ( Transistor )

PD- 94208 SMPS MOSFET IRFB42N20D HEXFET® Power MOSFET Applications High frequency DC-DC converters l Motor Control l Uninterrutible Power Supplies l VDSS 200V RDS(on) max 0.055Ω ID 44A Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Includin
International Rectifier
International Rectifier
datasheet IRFB42N20D pdf
2 IRFB42N20D   (IRFx42N20D) High frequency DC-DC converters

PD - 94114 PROVISIONAL SMPS MOSFET IRFB42N20D IRFS42N20D IRFSL42N20D HEXFET® Power MOSFET Applications l High frequency DC-DC converters VDSS 200V RDS(on) max 0.055Ω ID 42.6A Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effecti
International Rectifier
International Rectifier
datasheet IRFB42N20D pdf
1 IRFB42N20DPBF   HEXFET Power MOSFET

SMPS MOSFET PD- 95470 IRFB42N20DPbF HEXFET® Power MOSFET Applications High frequency DC-DC converters l Motor Control l Uninterrutible Power Supplies l Lead-Free l VDSS 200V RDS(on) max 0.055Ω ID 44A Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capaci
International Rectifier
International Rectifier
datasheet IRFB42N20DPBF pdf


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SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

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