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Datasheet IRFB4110 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | IRFB4110 | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRFB4110
FEATURES ·Drain Current –ID= 180A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 100V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 4.5mΩ(Max)
Applications ·High Efficiency Synchronous Rectification i |
 Inchange Semiconductor |
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| 2 | IRFB4110PBF | HEXFET Power MOSFET IRFB4110PbF
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits
G
Benefits l Improved Gate, Avalanche and Dynamic dv/dt
Ruggedness l Fully Characterized Capacitance and Avalanche
S |
 International Rectifier |
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| 1 | IRFB4110QPBF | HEXFET Power MOSFET PD - 96138
IRFB4110QPbF
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits l Lead-Free Benefits l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully C |
International Rectifier |
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