Datasheet IRFB3710 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	IRFB3710	N-CHANNEL MOSFET IRFB3710 Rev.E May.-2016 DATA SHEET 描述 / Descriptions TO-263 塑封封装 N 沟道 MOS 场效应管。N-CHANNEL MOSFET in a TO-263 Plastic Package. 特征 / Features 阻抗低，开关速度快。 Low On-Resistance, fast switching. 用途 / Applications 用于高功率 DC/DC 转换和功�	BLUE ROCKET ELECTRONICS

IRFB3 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
IRFB3607GPBF	Power MOSFET ( Transistor ) PD - 96329 Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G IRFB3607GPbF HEXFET® Power MOSFET D Benefits l Improved Gate, Avalanche and Dynamic dv/dt Rugg	International Rectifier
IRFB3607PBF	Power MOSFET ( Transistor ) PD - 97308C Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G IRFB3607PbF IRFS3607PbF IRFSL3607PbF HEXFET® Power MOSFET D Benefits l Improved Gate, Avalanc	International Rectifier
IRFB31N20	Power MOSFET(Vdss=200V/ Rds(on)max=0.082ohm/ Id=31A) PD- 93805B SMPS MOSFET IRFB31N20D IRFS31N20D IRFSL31N20D HEXFET® Power MOSFET Applications l High frequency DC-DC converters VDSS 200V RDS(on) max 0.082Ω ID 31A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effe	International Rectifier

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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