No | Part number | Description ( Function ) | Manufacturers | |
3 | IRFB31N20 | Power MOSFET(Vdss=200V/ Rds(on)max=0.082ohm/ Id=31A) PD- 93805B SMPS MOSFET IRFB31N20D IRFS31N20D IRFSL31N20D HEXFET® Power MOSFET Applications l High frequency DC-DC converters VDSS 200V RDS(on) max 0.082Ω ID 31A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) TO-220AB l Fully Characterized Avalanche Volta |
International Rectifier |
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2 | IRFB31N20D | Power MOSFET(Vdss=200V/ Rds(on)max=0.082ohm/ Id=31A) PD- 93805B SMPS MOSFET IRFB31N20D IRFS31N20D IRFSL31N20D HEXFET® Power MOSFET Applications l High frequency DC-DC converters VDSS 200V RDS(on) max 0.082Ω ID 31A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) TO-220AB l Fully Characterized Avalanche Volta |
International Rectifier |
|
1 | IRFB31N20DPBF | HEXFET Power MOSFET PD - 94946 SMPS MOSFET Applications l High Frequency DC-DC converters l Lead-Free IRFB31N20DPbF IRFS31N20DPbF IRFSL31N20DPbF HEXFET® Power MOSFET VDSS 200V RDS(on) max 0.082Ω ID 31A Benefits l Low Gate to Drain to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design,(See AN 1001) l Fully Characterized |
International Rectifier |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |