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IRFB3077GPBF PDF Datasheet

The IRFB3077GPBF is Power MOSFET ( Transistor ). It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 IRFB3077GPBF
Power MOSFET ( Transistor )

PD - 96200 Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Worldwide Best RDS(on) in TO-220 l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capabilit

International Rectifier
International Rectifier
pdf

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Recommended search results related to IRFB3077GPBF

Part No Description ( Function) Manufacturers PDF
IRFB3077PBF   Power MOSFET ( Transistor )

PD - 97047B Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Worldwide Best RDS(on) in TO-220 l Improved Gate, Avalanche and Dynamic dV/dt Ruggednes

International Rectifier
International Rectifier
datasheet pdf
2SC3077   Silicon NPN Transistor

Transistor 2SC3077 Silicon NPN planer type For UHF amplification/mixing Unit: mm M Di ain sc te on na tin nc ue e/ d s Features q q q 0.65±0.15 2.8 –0.3 +0.2 1.5 –0.05 +0.25 0.65±0.15 s Absolute Maximum Ratings Parameter Symbol VCBO VCEO VEBO IC PC Tj Collector to b

Panasonic
Panasonic
datasheet pdf
2SK3077   900 MHz BAND AMPLIFIER APPLICATIONS

2SK3077 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3077 900 MHz BAND AMPLIFIER APPLICATIONS (GSM) Unit: mm l Output Power l Gain l Drain Efficiency : PO = 15.0 dBmW (Min.) : GP = 15.0 dB (Min.) : ηD = 20% (Typ.) MAXIMUM RATINGS (Ta = 25

Toshiba Semiconductor
Toshiba Semiconductor
datasheet pdf
2SK3077A   VHF/UHF Band Amplifier Applications

2SK3077A TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3077A VHF/UHF Band Amplifier Applications Unit: mm Output power: Po ≥ 20.5dBmW Gain: Gp ≥ 10.5dB Drain Efficiency: ηD ≥ 50% · · · Maximum Ratings (Ta = 25°C) Characteristics

Toshiba Semiconductor
Toshiba Semiconductor
datasheet pdf
33077   LOW NOISEOPERATIONAL AMPLIFIER

Order this document by MC33077/D Dual, Low Noise Operational Amplifier The MC33077 is a precision high quality, high frequency, low noise monolithic dual operational amplifier employing innovative bipolar design techniques. Precision matching coupled with a unique analog resisto

Motorola Semiconductors
Motorola Semiconductors
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[1]    

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1N4007

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