No | Part number | Description ( Function ) | Manufacturers | |
2 | IRF9Z24S | Power MOSFET(Vdss=-60V/ Rds(on)=0.28ohm/ Id=-11A) PD - 9.912A IRF9Z24S/L HEXFET® Power MOSFET Advanced Process Technology Surface Mount (IRF9Z24S) l Low-profile through-hole (IRF9Z24L) l 175°C Operating Temperature l Fast Switching l P- Channel l Fully Avalanche Rated Description l l D VDSS = -60V RDS(on) = 0.28Ω G ID = -11A S Third Generation HEXFETs from International Rectifier utilize advanced processing technique |
International Rectifier |
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1 | IRF9Z24S | Power MOSFET ( Transistor ) IRF9Z24S, SiHF9Z24S, IRF9Z24L, SiHF9Z24L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) - 60 VGS = - 10 V 19 Qgs (nC) 5.4 Qgd (nC) 11 Configuration Single 0.28 S I2PAK (TO-262) D2PAK (TO-263) G G SD D G S D P-Channel MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • S |
Vishay |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |