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Datasheet IRF9Z24 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 11 | IRF9Z24 | Power MOSFET ( Transistor ) |
 International Rectifier |
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| 10 | IRF9Z24L | Power MOSFET(Vdss=-60V/ Rds(on)=0.28ohm/ Id=-11A) PD - 9.912A
IRF9Z24S/L
HEXFET® Power MOSFET
Advanced Process Technology Surface Mount (IRF9Z24S) l Low-profile through-hole (IRF9Z24L) l 175°C Operating Temperature l Fast Switching l P- Channel l Fully Avalanche Rated Description
l l
D
VDSS = -60V RDS(on) = 0.28Ω
G
ID = -11A
S
Third Gener |
International Rectifier |
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| 9 | IRF9Z24L | Power MOSFET ( Transistor ) IRF9Z24S, SiHF9Z24S, IRF9Z24L, SiHF9Z24L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC)
- 60 VGS = - 10 V
19
Qgs (nC)
5.4
Qgd (nC)
11
Configuration
Single
0.28 S
I2PAK (TO-262)
D2PAK (TO-263) G
G
SD
D G
S
D P-Channel MOSFET
FEATURES • Halogen-f |
 Vishay |
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| 8 | IRF9Z24N | Power MOSFET(Vdss=-55V/ Rds(on)=0.175ohm/ Id=-12A) PD -9.1484B
IRF9Z24N
HEXFET® Power MOSFET
Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description
l l
D
VDSS = -55V RDS(on) = 0.175Ω
G
ID = -12A
S
Fifth Generation HEXFETs from International Rectifier u |
International Rectifier |
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