No | Part number | Description ( Function ) | Manufacturers | |
14 | IRF9540 | 19A/ 100V/ 0.200 Ohm/ P-Channel Power MOSFETs IRF9540, RF1S9540SM Data Sheet July 1999 File Number 2282.6 19A, 100V, 0.200 Ohm, P-Channel Power MOSFETs These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are design |
Intersil Corporation |
|
13 | IRF9540 | Power MOSFET(Vdss=-100V/ Rds(on)=0.117ohm/ Id=-23A) PD - 91437B IRF9540N HEXFET® Power MOSFET l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated D VDSS = -100V RDS(on) = 0.117Ω G S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon |
International Rectifier |
|
12 | IRF9540 | (IRF9540 - IRF9543) P-CHANNEL POWER MOSFETS DataShee DataSheet DataSheet DataSheet 4 U .com et DataShee DataSheet DataSheet DataSheet 4 U .com et DataShee DataSheet DataSheet DataSheet 4 U .com et DataShee DataSheet DataSheet DataSheet 4 U .com www.DataSh |
Harris Corporation |
|
11 | IRF9540 | (IRF9540 / IRF9541) P-CHANNEL POWER MOSFETS DataShee DataSheet DataSheet DataSheet 4 U .com et DataShee DataSheet DataSheet DataSheet 4 U .com et DataShee DataSheet DataSheet DataSheet 4 U .com et DataShee DataSheet DataSheet DataSheet 4 U .com www.DataSh |
Samsung semiconductor |
|
10 | IRF9540 | P-Channel Power MOSFETs IRF9540, RF1S9540SM Data Sheet January 2002 19A, 100V, 0.200 Ohm, P-Channel Power MOSFETs These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are d |
Fairchild Semiconductor |
|
9 | IRF9540 | Power MOSFET ( Transistor ) Power MOSFET IRF9540, SiHF9540 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration - 100 VGS = - 10 V 61 14 29 Single 0.20 S TO-220AB G S D G D P-Channel MOSFET FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • P-Channel • 175 °C Operating Temperature • Fast Switching • Ease of Paralleling � |
Vishay |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |