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Datasheet IRF9510 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
5 | IRF9510 | 3.0A/ 100V/ 1.200 Ohm/ P-Channel Power MOSFET IRF9510
Data Sheet July 1999 File Number
2214.4
3.0A, 100V, 1.200 Ohm, P-Channel Power MOSFET
This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested and guaranteed to withstand a specified level of energy in the breakdown avalanche |
Intersil Corporation |
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4 | IRF9510 | Power MOSFET(Vdss=-100V/ Rds(on)=1.2ohm/ Id=-4.0A) |
International Rectifier |
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3 | IRF9510 | P-Channel Power MOSFET http://
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ETC |
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2 | IRF9510S | Power MOSFET(Vdss=-100V/ Rds(on)=1.2ohm/ Id=-4.0A) |
International Rectifier |
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Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
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