No | Part number | Description ( Function ) | Manufacturers | |
4 | IRF9230 | P-CHANNEL POWER MOSFET IRF9230 MECHANICAL DATA Dimensions in mm (inches) 39.95 (1.573) max. 30.40 (1.197) 30.15 (1.187) 17.15 (0.675) 16.64 (0.655) P–CHANNEL POWER MOSFET VDSS ID(cont) RDS(on) FEATURES • HERMETICALLY SEALED TO–3 METAL PACKAGE 1 20.32 (0.800) 18.80 (0.740) dia. 7.87 (0.310) 6.99 (0.275) 1.78 (0.070) 1.52 (0.060) 11.18 (0.440) 10.67 (0.420) 26.67 (1.050) max. 4.09 (0.161) |
Seme LAB |
|
3 | IRF9230 | -5.5A and -6.5A/ -150V and -200V/ 0.8 and 1.2 Ohm/ P-Channel Power MOSFETs Semiconductor IRF9230, IRF9231, IRF9232, IRF9233 -5.5A and -6.5A, -150V and -200V, 0.8 and 1.2 Ohm, P-Channel Power MOSFETs Description These devices are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. |
Intersil Corporation |
|
2 | IRF9230 | P-CHANNNEL TRANSISTORS PD-90548D IRF9230 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET®TRANSISTORS JANTX2N6806 JANTXV2N6806 THRU-HOLE -TO-204AE (TO-3) REF:MIL-PRF-19500/562 200V, P-CHANNNEL Product Summary Part Number BVDSS IRF9230 -200V RDS(on) 0.80 Ω ID -6.5A The HEXFET®technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry |
International Rectifier |
|
1 | IRF9230 | Trans MOSFET P-CH 200V 6.5A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |