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IRF9230 PDF Datasheet

The IRF9230 is P-channnel Transistors, P-channel Power MOSFET. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

Searched Lists

No Part number Description ( Function ) Manufacturers PDF
4 IRF9230
P-CHANNEL POWER MOSFET

IRF9230 MECHANICAL DATA Dimensions in mm (inches) 39.95 (1.573) max. 30.40 (1.197) 30.15 (1.187) 17.15 (0.675) 16.64 (0.655) P–CHANNEL POWER MOSFET VDSS ID(cont) RDS(on) FEATURES • HERMETICALLY SEALED TO–3 METAL PACKAGE 1 20.32 (0.800) 18.80 (0.740) dia. 7.87 (0.310) 6.99 (0.275) 1.78 (0.070) 1.52 (0.060) 11.18 (0.440) 10.67 (0.420) 26.67 (1.050) max. 4.09 (0.161)

Seme LAB
Seme LAB
pdf
3 IRF9230
-5.5A and -6.5A/ -150V and -200V/ 0.8 and 1.2 Ohm/ P-Channel Power MOSFETs

Semiconductor IRF9230, IRF9231, IRF9232, IRF9233 -5.5A and -6.5A, -150V and -200V, 0.8 and 1.2 Ohm, P-Channel Power MOSFETs Description These devices are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation.

Intersil Corporation
Intersil Corporation
pdf
2 IRF9230
P-CHANNNEL TRANSISTORS

PD-90548D IRF9230 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET®TRANSISTORS JANTX2N6806 JANTXV2N6806 THRU-HOLE -TO-204AE (TO-3) REF:MIL-PRF-19500/562 200V, P-CHANNNEL Product Summary Part Number BVDSS IRF9230 -200V RDS(on) 0.80 Ω ID -6.5A The HEXFET®technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry

International Rectifier
International Rectifier
pdf
1 IRF9230
Trans MOSFET P-CH 200V 6.5A 3-Pin(2+Tab) TO-3

New Jersey Semiconductor
New Jersey Semiconductor
pdf

[1]    

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