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Datasheet IRF9140 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 5 | IRF9140 | P-CHANNEL POWER MOSFET IRF9140
MECHANICAL DATA Dimensions in mm (inches)
39.95 (1.573) max. 30.40 (1.197) 30.15 (1.187) 17.15 (0.675) 16.64 (0.655)
P–CHANNEL POWER MOSFET
VDSS ID(cont) RDS(on)
FEATURES
• HERMETICALLY SEALED TO–3 METAL PACKAGE
1
20.32 (0.800) 18.80 (0.740) dia. 7.87 (0.310) 6.99 (0.275) 1.78 (0.0 |
 Seme LAB |
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| 4 | IRF9140 | -19A/ -100V/ 0.200 Ohm/ P-Channel Power MOSFET IRF9140
Data Sheet February 1999 File Number
2278.3
-19A, -100V, 0.200 Ohm, P-Channel Power MOSFET
These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the bre |
 Intersil Corporation |
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| 3 | IRF9140 | TRANSISTORS P-CHANNEL(Vdss=-100V/ Rds(on)=0.2ohm/ Id=-18A) PD - 93976A
REPETITIVE A V ALANCHE AND dv/dt RATED
HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE)
Product Summary
Part Number IRF9140 BVDSS -100V RDS(on) 0.2Ω ID -18A
IRF9140 100V, P-CHANNEL
The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transist |
 International Rectifier |
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| 2 | IRF9140 | (IRF9140 - IRF9143) P-Channel Power MOSFETs |
 Samsung Electronics |
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