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IRF840LCL PDF Datasheet

The IRF840LCL is Power MOSFET ( Transistor ), Power MOSFET(vdss=500V/ Rds(on)=0.85ohm/ Id=8.0A). It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




Notice


Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

Searched Lists

No Part number Description ( Function ) Manufacturers PDF
3 IRF840LCL
Power MOSFET(Vdss=500V/ Rds(on)=0.85ohm/ Id=8.0A)

PD- 93766 IRF840LCS IRF840LCL HEXFET® Power MOSFET l l l l l l Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V VGS Rating Reduced CISS, COSS, CRSS Extremely High Frequency Operation Repetitive Avalanche Rated D VDSS = 500V G S RDS(on) = 0.85Ω ID = 8.0A Description This new series of low charge HEXFET® power MOSFETs achieve significant lower gate char

International Rectifier
International Rectifier
pdf
2 IRF840LCL
Power MOSFET ( Transistor )

IRF840LCS/LCL Power MOSFET VDSS = 500V, RDS(on) = 0.85 ohm, ID = 8.0 A D N Channel G Symbol S ELECTRICAL CHARACTERISICS at Tj = 25 C Maximum. Unless stated Otherwise Parameter Symbol Test Conditions Drain to Source Breakdown Voltage Drain to Source Leakage Current Gate to Source Leakage Current Gate Threshold Voltage V(BR)DSS VGS = 0 VDC, ID = 250µA IDSS VDS = 500VDC

TRANSYS
TRANSYS
pdf
1 IRF840LCL
Power MOSFET ( Transistor )

IRF840LCS, IRF840LCL, SiHF840LCS, SiHF840LCL Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) 500 VGS = 10 V 39 Qgs (nC) 10 Qgd (nC) 19 Configuration Single 0.85 I2PAK (TO-262) D2PAK (TO-263) D G DS G D S G S N-Channel MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Ultra Low Gate Charge • Reduced

Vishay
Vishay
pdf

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