No | Part number | Description ( Function ) | Manufacturers | |
3 | IRF840LCL | Power MOSFET(Vdss=500V/ Rds(on)=0.85ohm/ Id=8.0A) PD- 93766 IRF840LCS IRF840LCL HEXFET® Power MOSFET l l l l l l Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V VGS Rating Reduced CISS, COSS, CRSS Extremely High Frequency Operation Repetitive Avalanche Rated D VDSS = 500V G S RDS(on) = 0.85Ω ID = 8.0A Description This new series of low charge HEXFET® power MOSFETs achieve significant lower gate char |
International Rectifier |
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2 | IRF840LCL | Power MOSFET ( Transistor ) IRF840LCS/LCL Power MOSFET VDSS = 500V, RDS(on) = 0.85 ohm, ID = 8.0 A D N Channel G Symbol S ELECTRICAL CHARACTERISICS at Tj = 25 C Maximum. Unless stated Otherwise Parameter Symbol Test Conditions Drain to Source Breakdown Voltage Drain to Source Leakage Current Gate to Source Leakage Current Gate Threshold Voltage V(BR)DSS VGS = 0 VDC, ID = 250µA IDSS VDS = 500VDC |
TRANSYS |
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1 | IRF840LCL | Power MOSFET ( Transistor ) IRF840LCS, IRF840LCL, SiHF840LCS, SiHF840LCL Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) 500 VGS = 10 V 39 Qgs (nC) 10 Qgd (nC) 19 Configuration Single 0.85 I2PAK (TO-262) D2PAK (TO-263) D G DS G D S G S N-Channel MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Ultra Low Gate Charge • Reduced |
Vishay |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |