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IRF830APBF PDF Datasheet

The IRF830APBF is Hexfet Power MOSFET. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 IRF830APBF
HEXFET Power MOSFET

PD- 94820 SMPS MOSFET Applications Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply High speed power switching Lead-Free Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Current Effective Coss specified ( See AN 1001) IRF830APbF HEXFET®

International Rectifier
International Rectifier
pdf

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Recommended search results related to IRF830APBF

Part No Description ( Function) Manufacturers PDF
HIRF830   N-CHANNEL POWER MOSFET

HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200407 Issued Date : 2004.10.01 Revised Date : 2005.04.22 Page No. : 1/4 HIRF830 / HIRF830F N-CHANNEL POWER MOSFET HIRF830 Series Pin Assignment Tab 3-Lead Plastic TO-220AB Package Code: E Pin 1: Gate Pin 2 & Tab: Drain Pin 3:

Hi-Sincerity Mocroelectronics
Hi-Sincerity Mocroelectronics
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HIRF830F   N-CHANNEL POWER MOSFET

HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200407 Issued Date : 2004.10.01 Revised Date : 2005.04.22 Page No. : 1/4 HIRF830 / HIRF830F N-CHANNEL POWER MOSFET HIRF830 Series Pin Assignment Tab 3-Lead Plastic TO-220AB Package Code: E Pin 1: Gate Pin 2 & Tab: Drain Pin 3:

Hi-Sincerity Mocroelectronics
Hi-Sincerity Mocroelectronics
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IRF830   PowerMOS transistor Avalanche energy rated

Philips Semiconductors Product specification PowerMOS transistor Avalanche energy rated FEATURES • Repetitive Avalanche Rated • Fast switching • High thermal cycling performance • Low thermal resistance g IRF830 SYMBOL d QUICK REFERENCE DATA VDSS = 500 V ID = 5.9 A R

NXP Semiconductors
NXP Semiconductors
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IRF830   N - CHANNEL 500V - 1.35ohm - 4.5A - TO-220 PowerMESH] MOSFET

® IRF830 N - CHANNEL 500V - 1.35Ω - 4.5A - TO-220 PowerMESH™ MOSFET TYPE IRF830 s s s s s V DSS 500 V R DS(on) < 1.5 Ω ID 4.5 A TYPICAL RDS(on) = 1.35 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 2 3

STMicroelectronics
STMicroelectronics
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IRF830   N-CHANNEL ENHANCEMENT MODE

TRSYS
TRSYS
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