No | Part number | Description ( Function ) | Manufacturers | |
5 | IRF821 | N-Channel MOSFET Transistor INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF821 FEATURES ·Lower Input Capacitance ·Improved Gate Charge ·Extended Safe Operating Area ·Rugged Gate Oxide Technology DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS V |
Inchange Semiconductor |
|
4 | IRF821 | N-Channel Power MOSFETs/ 3.0 A/ 450 V/500 V |
Fairchild Semiconductor |
|
3 | IRF821 | N-CHANNEL Enhancement-Mode Silicon Gate TMOS |
Motorola Inc |
|
2 | IRF821 | N-CHANNEL POWER MOSFETS |
Samsung semiconductor |
|
1 | IRF821 | N-Channel Power MOSFETs S E M I C O N D U C T O R IRF820, IRF821, IRF822, IRF823 2.2A and 2.5A, 450V and 500V, 3.0 and 4.0 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All |
Harris |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |