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IRF820ALPBF PDF Datasheet

The IRF820ALPBF is Hexfet Power MOSFET. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 IRF820ALPBF
HEXFET Power MOSFET

PD - 95533 SMPS MOSFET Applications Switch Mode Power Supply (SMPS) l Uninterruptable Power Supply l High speed power switching l Lead-Free l HEXFET® Power MOSFET IRF820ASPbF IRF820ALPbF ID 2.5A VDSS 500V RDS(on) max 3.0Ω Benefits Low Gate Charge Qg Results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacit

International Rectifier
International Rectifier
pdf

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Recommended search results related to IRF820ALPBF

Part No Description ( Function) Manufacturers PDF
IRF820   N-Channel MOSFET Transistor

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF820 DESCRIPTION ·Drain Current –ID= 2.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 3Ω(Max) ·Fast Switching Speed ·Simple Drive Req

Inchange Semiconductor
Inchange Semiconductor
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IRF820   N-CHANNEL Enhancement-Mode Silicon Gate TMOS

Motorola  Inc
Motorola Inc
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IRF820   N - CHANNEL 500V - 2.5ohm - 2.5 A - TO-220 PowerMESH] MOSFET

® IRF820 N - CHANNEL 500V - 2.5 Ω - 2.5 A - TO-220 PowerMESH™ MOSFET TYPE IRF820 s s s s s V DSS 500 V R DS(on) < 3Ω ID 2.5 A TYPICAL RDS(on) = 2.5 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 2 3 DE

STMicroelectronics
STMicroelectronics
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IRF820   N-CHANNEL POWER MOSFETS

Samsung semiconductor
Samsung semiconductor
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IRF820   2.5A/ 500V/ 3.000 Ohm/ N-Channel Power MOSFET

IRF820 Data Sheet July 1999 File Number 1581.4 2.5A, 500V, 3.000 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the

Intersil Corporation
Intersil Corporation
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[1]    

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