No | Part number | Description ( Function ) | Manufacturers | |
3 | IRF7756 | Power MOSFET ( Transistor ) l Ultra Low On-Resistance l Dual P-Channel MOSFET l Very Small SOIC Package l Low Profile (< 1.2mm) l Available in Tape & Reel PD -94159A VDSS -12V IRF7756 HEXFET® Power MOSFET RDS(on) max 0.040@VGS = -4.5V 0.058@VGS = -2.5V 0.087@VGS = -1.8V ID ±4.3A ±3.4A ±2.2A Description HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to |
International Rectifier |
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2 | IRF7756GPBF | Power MOSFET ( Transistor ) PD- 96153A IRF7756GPbF HEXFET® Power MOSFET l l l l l l l Ultra Low On-Resistance Dual P-Channel MOSFET Very Small SOIC Package Low Profile (< 1.2mm) Available in Tape & Reel Lead-Free Halogen-Free VDSS -12V RDS(on) max 0.040@VGS = -4.5V 0.058@VGS = -2.5V 0.087@VGS = -1.8V ID -4.3A -3.4A -2.2A Description HEXFET® Power MOSFETs from International Rectifier utilize advanc |
International Rectifier |
|
1 | IRF7756PbF | Power MOSFET ( Transistor ) l Ultra Low On-Resistance l Dual P-Channel MOSFET l Very Small SOIC Package l Low Profile (< 1.2mm) l Available in Tape & Reel l Lead-Free VDSS -12V PD-96017A IRF7756PbF HEXFET® Power MOSFET RDS(on) max 0.040@VGS = -4.5V 0.058@VGS = -2.5V 0.087@VGS = -1.8V ID ±4.3A ±3.4A ±2.2A Description HEXFET® Power MOSFETs from International Rectifier utilize advanced processing |
International Rectifier |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |