Datasheet IRF7530PBF Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	IRF7530PBF	Power MOSFET ( Transistor ) PD - 95243 IRF7530PbF l Trench Technology l Ultra Low On-Resistance l Dual N-Channel MOSFET l Very Small SOIC Package l Low Profile (<1.1mm) lAvailable in Tape & Reel l Lead-Free S1 G1 S2 G2 Description New trench HEXFET® power MOSFETs from International Rectifier utilize advanced processing tec	International Rectifier

IRF7530 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
IRF7530	Power MOSFET(Vdss=20V/ Rds(on)=0.030ohm) PD-93760B IRF7530 HEXFET® Power MOSFET q q q q q q Trench Technology Ultra Low On-Resistance Dual N-Channel MOSFET Very Small SOIC Package Low Profile (<1.1mm) Available in Tape & Reel S1 G1 S2 G2 1 8 D1 D1 D2 D2 2 7 VDSS = 20V RDS(on) = 0.030Ω 3 6 4 5 Descriptio	International Rectifier
IRF7530PBF	Power MOSFET ( Transistor ) PD - 95243 IRF7530PbF l Trench Technology l Ultra Low On-Resistance l Dual N-Channel MOSFET l Very Small SOIC Package l Low Profile (<1.1mm) lAvailable in Tape & Reel l Lead-Free S1 G1 S2 G2 Description New trench HEXFET® power MOSFETs from International Rectifier utilize adv	International Rectifier

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Número de pieza	Descripción	Fabricantes	PDF
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