No | Part number | Description ( Function ) | Manufacturers | |
2 | IRF7506 | Power MOSFET(Vdss=-30V/ Rds(on)=0.27ohm) PD - 9.1268F IRF7506 HEXFET® Power MOSFET Generation V Technology l Ultra Low On-Resistance l Dual P-Channel MOSFET l Very Small SOIC Package l Low Profile (<1.1mm) l Available in Tape & Reel l Fast Switching Description l S1 G1 S2 G2 1 8 D1 D1 D2 D2 2 7 VDSS = -30V RDS(on) = 0.27Ω 3 6 4 5 T o p V iew Fifth Generation HEXFETs from International Rectifier utilize a |
International Rectifier |
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1 | IRF7506PBF | HEXFET Power MOSFET PD - 95696 IRF7506PbF • Lead-Free www.irf.com 9/2/04 IRF7506PbF 2 www.irf.com IRF7506PbF www.irf.com 3 IRF7506PbF 4 www.irf.com IRF7506PbF www.irf.com 5 IRF7506PbF 6 www.irf.com IRF7506PbF Micro8 Package Outline LEAD ASSIGNMENTS D -B3 D D D D 8 H 0.25 (.010) 1 2 3 4 S S S G e 6X e1 θ A -CB 8X 0.08 (.003) M A1 C A S B S 0.10 (.004) L 8X |
International Rectifier |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |