No | Part number | Description ( Function ) | Manufacturers | |
2 | IRF7488 | Power MOSFET ( Transistor ) PD - 94507 IRF7488 Applications l High frequency DC-DC converters HEXFET® Power MOSFET VDSS 80V RDS(on) max 29mW@VGS=10V Qg 38nC Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) S S S l Fully Characterized Avalanche Voltage G and Current 18 27 36 45 |
International Rectifier |
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1 | IRF7488PBF | Power MOSFET ( Transistor ) Applications l High frequency DC-DC converters l Lead-Free PD - 95283 IRF7488PbF HEXFET® Power MOSFET VDSS 80V RDS(on) max 29mW@VGS=10V Qg 38nC Benefits S l Low Gate-to-Drain Charge to Reduce Switching Losses S l Fully Characterized Capacitance Including S Effective COSS to Simplify Design, (See App. Note AN1001) G l Fully Characterized Avalanche Voltage and Cur |
International Rectifier |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |