| No | Part number | Description ( Function ) | Manufacturers | |
| 3 | IRF737LC | HEXFET Power MOSFET PD - 9.1314 PRELIMINARY IRF737LC VDSS = 300V RDS(on) = 0.75Ω ID = 6.1A HEXFET® Power MOSFET Reduced Gate Drive Requirement Enhanced 30V VGS Rating Reduced CISS, COSS, CRSS Extremely High Frequency Operation Repetitive Avalanche Rated Description This new series of Low Charge HEXFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing the new LCDMOS |
 International Rectifier |
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| 2 | IRF737LC | Power MOSFET ( Transistor ) Power MOSFET IRF737LC, SiHF737LC Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 300 VGS = 10 V 17 4.8 7.6 Single TO-220 D 0.75 S D G G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb FEATURES • Reduced Gate Drive Requirement • Enhanced 30 V VGS Rating • Reduced Ciss, Coss, Crss • Extrem |
 Vishay |
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| 1 | IRF737LCPBF | HEXFET Power MOSFET PD - 95947 IRF737LCPbF • Lead-Free www.irf.com 12/20/04 IRF737LCPbF 2 www.irf.com IRF737LCPbF www.irf.com 3 IRF737LCPbF 4 www.irf.com IRF737LCPbF www.irf.com 5 IRF737LCPbF 6 www.irf.com IRF737LCPbF www.irf.com 7 IRF737LCPbF TO-220AB Package Outline TO-220AB Part Marking Information E XAMP L E : T HIS IS AN IR F 1010 L OT CODE 1789 |
International Rectifier |
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List of most widely used semiconductors
| Part Number | Function | Manufacturers | |
| 1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
 Vishay |
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| LM317 | This is a popular adjustable voltage regulator. |
 ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |
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