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Datasheet IRF7379 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | IRF7379 | Power MOSFET ( Transistor ) PD - 91625
IRF7379
HEXFET® Power MOSFET
l l l l l
Generation V Technology Ultra Low On-Resistance Complimentary Half Bridge Surface Mount Fully Avalanche Rated
S1 G1 S2 G2
N -C H A N N EL M O S FET 1 8
D1 D1 D2 D2
N-Ch VDSS 30V
P-Ch -30V
2
7
3
6
4
5
P -C H AN N E L MO S FET
RDS(on) 0 |
 International Rectifier |
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| 2 | IRF7379PBF | Power MOSFET ( Transistor ) PD - 95300
IRF7379PbF
HEXFET® Power MOSFET
l l l l l l
Generation V Technology Ultra Low On-Resistance Complimentary Half Bridge Surface Mount Fully Avalanche Rated Lead-Free
S1 G1 S2 G2
N-CHANNEL MOSFET 1 8 2 3 4 7
D1 D1 D2 D2
N-Ch VDSS 30V
P-Ch -30V
6 5
P-CHANNEL MOSFET
Description
Fift |
International Rectifier |
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| 1 | IRF7379QPbF | Power MOSFET ( Transistor ) l Advanced Process Technology l Ultra Low On-Resistance l Dual N and P Channel MOSFET l Surface Mount l Available in Tape & Reel l 150°C Operating Temperature l Lead-Free
Description
These HEXFET® Power MOSFET's in a Dual SO8 package utilize the lastest processing techniques to achieve extremely l |
International Rectifier |
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