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IRF7343QPBF PDF Datasheet

The IRF7343QPBF is Power MOSFET ( Transistor ). It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 IRF7343QPBF
Power MOSFET ( Transistor )

PD - 96110A l Advanced Process Technology l Ultra Low On-Resistance l Dual N and P Channel MOSFET l Surface Mount l Available in Tape & Reel l 150°C Operating Temperature l Lead-Free Description These HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these HE

International Rectifier
International Rectifier
pdf

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Recommended search results related to IRF7343QPBF

Part No Description ( Function) Manufacturers PDF
AUIRF7343Q   Power MOSFET ( Transistor )

AUTOMOTIVE MOSFET PD - 96343B Features l l l l l l l l HEXFET® Power MOSFET S1 G1 S2 G2 N-CHANNEL MOSFET 1 8 2 3 4 7 6 5 AUIRF7343Q N-Ch P-Ch -55V V(BR)DSS RDS(on) typ. 55V Advanced Planar Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Availabl

International Rectifier
International Rectifier
datasheet pdf
AUIRF7343Q   Dual N and P Channel MOSFET

  AUTOMOTIVE GRADE AUIRF7343Q Features  Advanced Planar Technology  Ultra Low On-Resistance  Logic Level Gate Drive  Dual N and P Channel MOSFET  Surface Mount  Available in Tape & Reel  150°C Operating Temperature  Lead-Free, RoHS Compliant  Autom

Infineon
Infineon
datasheet pdf
IRF7343   HEXFET Power MOSFET

PD -91709 IRF7343 HEXFET® Power MOSFET l l l l l Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated S1 G1 S2 G2 N - C H A N N EL M O S FE T 1 8 2 7 D1 D1 D2 D2 N-Ch VDSS 55V P-Ch -55V 3 4 6 5 P -C H A N N E

International Rectifier
International Rectifier
datasheet pdf
IRF7343PBF   HEXFET Power MOSFET

PD - 92547 IRF7343PbF l l l l l l Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated Lead-Free HEXFET® Power MOSFET S1 G1 S2 G2 N-CHANNEL MOSFET 1 8 2 3 4 7 D1 D1 D2 D2 N-Ch VDSS 55V P-Ch -55V 6 5 Description F

International Rectifier
International Rectifier
datasheet pdf
7343   DIGITALLY CONTROLLED AUDIO PROCESSOR

® TDA7343 DIGITALLY CONTROLLED AUDIO PROCESSOR INPUT MULTIPLEXER - TWO STEREO AND ONE MONO INPUTS - SELECTABLE INPUT GAIN FOR OPTIMAL ADAPTATION TO DIFFERENT SOURCES FULLY PROGRAMMABLE LOUDNESS FUNCTION VOLUME CONTROL IN 0.3dB STEPS INCLUDING GAIN UP TO 20dB ZERO CROSSING MUTE

STMicroelectronics
STMicroelectronics
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