No | Part number | Description ( Function ) | Manufacturers | |
1 | IRF7343QPBF | Power MOSFET ( Transistor ) PD - 96110A l Advanced Process Technology l Ultra Low On-Resistance l Dual N and P Channel MOSFET l Surface Mount l Available in Tape & Reel l 150°C Operating Temperature l Lead-Free Description These HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these HE |
International Rectifier |
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Part No | Description ( Function) | Manufacturers | |
AUIRF7343Q | Power MOSFET ( Transistor ) AUTOMOTIVE MOSFET PD - 96343B Features l l l l l l l l HEXFET® Power MOSFET S1 G1 S2 G2 N-CHANNEL MOSFET 1 8 2 3 4 7 6 5 AUIRF7343Q N-Ch P-Ch -55V V(BR)DSS RDS(on) typ. 55V Advanced Planar Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Availabl |
International Rectifier |
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AUIRF7343Q | Dual N and P Channel MOSFET AUTOMOTIVE GRADE AUIRF7343Q Features Advanced Planar Technology Ultra Low On-Resistance Logic Level Gate Drive Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Lead-Free, RoHS Compliant Autom |
Infineon |
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IRF7343 | HEXFET Power MOSFET PD -91709 IRF7343 HEXFET® Power MOSFET l l l l l Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated S1 G1 S2 G2 N - C H A N N EL M O S FE T 1 8 2 7 D1 D1 D2 D2 N-Ch VDSS 55V P-Ch -55V 3 4 6 5 P -C H A N N E |
International Rectifier |
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IRF7343PBF | HEXFET Power MOSFET PD - 92547 IRF7343PbF l l l l l l Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated Lead-Free HEXFET® Power MOSFET S1 G1 S2 G2 N-CHANNEL MOSFET 1 8 2 3 4 7 D1 D1 D2 D2 N-Ch VDSS 55V P-Ch -55V 6 5 Description F |
International Rectifier |
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7343 | DIGITALLY CONTROLLED AUDIO PROCESSOR ® TDA7343 DIGITALLY CONTROLLED AUDIO PROCESSOR INPUT MULTIPLEXER - TWO STEREO AND ONE MONO INPUTS - SELECTABLE INPUT GAIN FOR OPTIMAL ADAPTATION TO DIFFERENT SOURCES FULLY PROGRAMMABLE LOUDNESS FUNCTION VOLUME CONTROL IN 0.3dB STEPS INCLUDING GAIN UP TO 20dB ZERO CROSSING MUTE |
STMicroelectronics |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |