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Datasheet IRF7341 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 5 | IRF7341 | HEXFET Power MOSFET PD -91703
IRF7341
HEXFET® Power MOSFET
Generation V Technology Ultra Low On-Resistance l Dual N-Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching Description
l l
S1 G1 S2 G2
1 8
D1 D1 D2 D2
2
7
VDSS = 55V RDS(on) = 0.050Ω
3
6
4
5
Top V ie |
 International Rectifier |
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| 4 | IRF7341GPBF | Power MOSFET ( Transistor ) IRF7341GPbF
• Advanced Process Technology • ÿDual N-Channel MOSFET • ÿUltra Low On-Resistance • ÿ175°C Operating Temperature • ÿ Repetitive Avalanche Allowed up to Tjmax • ÿLead-Free • ÿHalogen-Free
Description
These HEXFET ® Power MOSFET’s in a Dual SO-8 package utilize the |
International Rectifier |
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| 3 | IRF7341PBF | HEXFET Power MOSFET PD -95199
IRF7341PbF
Generation V Technology l Ultra Low On-Resistance l Dual N-Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching l Lead-Free Description
l
HEXFET® Power MOSFET
S1 G1 S2 G2
1 2 3 4 8 7
D1 D1 D2 D2
VDSS = 55V RDS(on) = 0.050Ω
6 5 |
International Rectifier |
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| 2 | IRF7341Q | HEXFET Power MOSFET PD - 94391B
IRF7341Q
Typical Applications
• Anti-lock Braking Systems (ABS) • Electronic Fuel Injection • Air bag
HEXFET® Power MOSFET VDSS
55V
RDS(on) max
0.050@VGS = 10V 0.065@VGS = 4.5V
ID
5.1A 4.42A
Benefits
• • • • • •
Advanced Process Technology Dual N-Channel MOSFET U |
International Rectifier |
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