Datasheet IRF7314PBF Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	IRF7314PBF	Power MOSFET ( Transistor ) PD - 95181 IRF7314PbF l l l l l l Generation V Technology Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Fully Avalanche Rated Lead-Free HEXFET® Power MOSFET S1 G1 S2 G2 1 2 3 4 8 7 D1 D1 D2 D2 VDSS = -20V RDS(on) = 0.058Ω 6 5 Fifth Generation HEXFETs from International Rectif	International Rectifier

IRF7314 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
IRF7314	HEXFET Power MOSFET PD - 9.1436B PRELIMINARY l l l l l IRF7314 HEXFET® Power MOSFET 8 7 Generation V Technology Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Fully Avalanche Rated S1 G1 S2 G2 1 D1 D1 D2 D2 2 VDSS = -20V RDS(on) = 0.058Ω 3 6 4 5 T op V iew Description F	International Rectifier
IRF7314QPBF	Power MOSFET ( Transistor ) PD - 96107A IRF7314QPbF Benefits • Advanced Process Technology • ÿDual P-Channel MOSFET • ÿUltra Low On-Resistance • ÿ175°C Operating Temperature • ÿRepetitive Avalanche Allowed up to Tjmax • ÿLead-Free Description These HEXFET ® Power MOSFET’s in a Dual SO-	International Rectifier
IRF7314Q	Power MOSFET ( Transistor ) PD -93945A IRF7314Q HEXFET® Power MOSFET Typical Applications • Anti-lock Braking Systems (ABS) • Electronic Fuel Injection • Air bag Benefits • Advanced Process Technology • Dual P-Channel MOSFET • Ultra Low On-Resistance • 175°C Operating Temperature • Repeti	International Rectifier

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Número de pieza	Descripción	Fabricantes	PDF
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