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IRF7313QPBF PDF Datasheet

The IRF7313QPBF is Hexfet Power MOSFET. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

Searched Lists

No Part number Description ( Function ) Manufacturers PDF
1 IRF7313QPBF
HEXFET Power MOSFET

PD - 96125 IRF7313QPbF HEXFET® Power MOSFET l l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dual N- Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Automotive [Q101] Qualified Lead-Free S1 G1 S2 G2 1 2 8 7 D1 D1 D2 D2 VDSS = 30V RDS(on) = 0.029Ω 3 4 6 5 Top View Description Specifically designed for Automotiv

International Rectifier
International Rectifier
pdf

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Recommended search results related to IRF7313QPBF

Part No Description ( Function) Manufacturers PDF
AUIRF7313Q   Dual N Channel MOSFET

  Features  Advanced Planar Technology  Dual N Channel MOSFET  Low On-Resistance  Logic Level Gate Drive  Dynamic dv/dt Rating  175°C Operating Temperature  Fast Switching  Lead-Free, RoHS Compliant  Automotive Qualified * AUTOMOTIVE GRADE AUIRF7313

Infineon
Infineon
datasheet pdf
AUIRF7313Q   Power MOSFET ( Transistor )

PD - 97751 AUTOMOTIVE GRADE AUIRF7313Q HEXFET® Power MOSFET 8 7 Features l l l l l l l l Advanced Planar Technology Dual N Channel MOSFET Low On-Resistance Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Lead-Free, RoHS Compliant Automotive Qualified* S1 G1

International Rectifier
International Rectifier
datasheet pdf
IRF7313   HEXFET POWER MOSFET

PD - 91480B IRF7313 l l l l l Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Fully Avalanche Rated HEXFET® Power MOSFET S1 G1 S2 G2 1 8 7 D1 D1 D2 D2 2 VDSS = 30V RDS(on) = 0.029Ω 3 6 4 5 Top View Fifth Generation HEXFETs from In

International Rectifier
International Rectifier
datasheet pdf
IRF7313PBF   HEXFET Power MOSFET

PD - 95039 IRF7313PbF l l l l l l Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Fully Avalanche Rated Lead-Free HEXFET® Power MOSFET S1 G1 S2 G2 1 2 8 7 D1 D1 D2 D2 VDSS = 30V RDS(on) = 0.029Ω 3 4 6 5 Top View Fifth Generation HEXF

International Rectifier
International Rectifier
datasheet pdf
000-7313-37   Discrete Single Port 10/100 Base-T PDSO-G16

more than you expect Discrete Single Port 10/100 Base-T PDSO-G16 LANDatacom Typical Common Electrical Characteristics 1 Inductance 350uH Min. Dielectic Rating 1500VAC Insertion Loss -1.1dB max. -18dB min. -16dB min. Return Loss -14dB min. -12dB min. Cross Ta

Midcom
Midcom
datasheet pdf

[1]    

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Part Number Function Manufacturers PDF
1N4007

The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V.

Vishay Semiconductor
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This is a popular adjustable voltage regulator.
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