No | Part number | Description ( Function ) | Manufacturers | |
18 | IRF731 | N-Channel Mosfet Transistor INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF731 DESCRIPTION ·Drain Current –ID=5.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 350V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.0Ω(Max) ·Fast Switching Speed APPLICATIONS ·Designed especially for high voltage,high speed applications, such as off-line switching power suppli |
Inchange Semiconductor |
|
17 | IRF731 | N-Channel Power MOSFETs/ 5.5A/ 350 V/400V |
Fairchild Semiconductor |
|
16 | IRF731 | Trans MOSFET P-CH 30V 4.7A 8-Pin SOIC |
New Jersey Semiconductor |
|
15 | IRF7311 | HEXFET Power MOSFET PD - 91435C IRF7311 HEXFET® Power MOSFET l l l l l Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Fully Avalanche Rated S1 G1 S2 G2 1 8 7 D1 D1 D2 D2 2 VDSS = 20V RDS(on) = 0.029Ω 3 6 4 5 T o p V ie w Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely |
International Rectifier |
|
14 | IRF7313 | HEXFET POWER MOSFET PD - 91480B IRF7313 l l l l l Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Fully Avalanche Rated HEXFET® Power MOSFET S1 G1 S2 G2 1 8 7 D1 D1 D2 D2 2 VDSS = 30V RDS(on) = 0.029Ω 3 6 4 5 Top View Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance |
International Rectifier |
|
13 | IRF7313PBF | HEXFET Power MOSFET PD - 95039 IRF7313PbF l l l l l l Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Fully Avalanche Rated Lead-Free HEXFET® Power MOSFET S1 G1 S2 G2 1 2 8 7 D1 D1 D2 D2 VDSS = 30V RDS(on) = 0.029Ω 3 4 6 5 Top View Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on- |
International Rectifier |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |