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IRF731 PDF Datasheet

The IRF731 is N-channel MOSFET Transistor, Trans MOSFET P-ch 30V 4.7a 8-pin SoIC. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

Searched Lists

No Part number Description ( Function ) Manufacturers PDF
18 IRF731
N-Channel Mosfet Transistor

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF731 DESCRIPTION ·Drain Current –ID=5.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 350V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.0Ω(Max) ·Fast Switching Speed APPLICATIONS ·Designed especially for high voltage,high speed applications, such as off-line switching power suppli

Inchange Semiconductor
Inchange Semiconductor
pdf
17 IRF731
N-Channel Power MOSFETs/ 5.5A/ 350 V/400V

Fairchild Semiconductor
Fairchild Semiconductor
pdf
16 IRF731
Trans MOSFET P-CH 30V 4.7A 8-Pin SOIC

New Jersey Semiconductor
New Jersey Semiconductor
pdf
15 IRF7311
HEXFET Power MOSFET

PD - 91435C IRF7311 HEXFET® Power MOSFET l l l l l Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Fully Avalanche Rated S1 G1 S2 G2 1 8 7 D1 D1 D2 D2 2 VDSS = 20V RDS(on) = 0.029Ω 3 6 4 5 T o p V ie w Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely

International Rectifier
International Rectifier
pdf
14 IRF7313
HEXFET POWER MOSFET

PD - 91480B IRF7313 l l l l l Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Fully Avalanche Rated HEXFET® Power MOSFET S1 G1 S2 G2 1 8 7 D1 D1 D2 D2 2 VDSS = 30V RDS(on) = 0.029Ω 3 6 4 5 Top View Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance

International Rectifier
International Rectifier
pdf
13 IRF7313PBF
HEXFET Power MOSFET

PD - 95039 IRF7313PbF l l l l l l Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Fully Avalanche Rated Lead-Free HEXFET® Power MOSFET S1 G1 S2 G2 1 2 8 7 D1 D1 D2 D2 VDSS = 30V RDS(on) = 0.029Ω 3 4 6 5 Top View Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-

International Rectifier
International Rectifier
pdf

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List of most widely used semiconductors

Part Number Function Manufacturers PDF
1N4007

The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V.

Vishay Semiconductor
Vishay
pdf
LM317

This is a popular adjustable voltage regulator.
( 1.2V to 37V)

On Semiconductor
ON Semiconductor
pdf

 6N137  |   LM393   |   2N3906    |   2N2222   |   TIP120   |

   1N5818   |   LM324N    |   A1015   |   SMAJ20CA  


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