No | Part number | Description ( Function ) | Manufacturers | |
3 | IRF7304 | Generation V Technology Previous Datasheet Index Next Data Sheet PD - 9.1240B PRELIMINARY IRF7304 1 8 HEXFET® Power MOSFET Generation V Technology Ultra Low On-Resistance Dual P-Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest pos |
International Rectifier |
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2 | IRF7304PBF | HEXFET Power MOSFET IRF7304PbF HEXFET® Power MOSFET l l l l l l l l PD - 95038 Generation V Technology Ultra Low On-Resistance Dual P-Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching Lead-Free S1 G1 S2 G2 1 2 3 4 8 7 D1 D1 D2 D2 VDSS = -20V RDS(on) = 0.090Ω 6 5 Top View Description Fifth Generation HEXFETs from International Rectifier utilize a |
International Rectifier |
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1 | IRF7304QPBF | Power MOSFET ( Transistor ) PD - 96104A IRF7304QPbF l Advanced Process Technology l Ultra Low On-Resistance l Dual P Channel MOSFET l Surface Mount l Available in Tape & Reel l 150°C Operating Temperature l Lead-Free S1 G1 S2 G2 Description These HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniquestoachieveextremelylow on-resistance per silicon area. Additional fea |
International Rectifier |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |