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Datasheet IRF730 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 48 | IRF730 | N-CHANNEL MOSFET IRF730
Rev.F Mar.-2016
DATA SHEET
描述 / Descriptions TO-220 塑封封装 N 沟道 MOS 场效应管。N-CHANNEL MOSFET in a TO-220 Plastic Package.
特征 / Features
低栅电荷,低反馈电容,开关速度快。 Low gate charge, low crss, fast switching.
用途 / Applications
用于高效 D |
 BLUE ROCKET ELECTRONICS |
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| 47 | IRF730 | N-Channel Power MOSFET / Transistor SEMICONDUCTOR
IRF730 Series RRooHHSS
Nell High Power Products
N-Channel Power MOSFET (5.5A, 400Volts)
DESCRIPTION
The Nell IRF730 are N-Channel enhancement mode silicon gate power field effect transistors. They are designed, tested and guaranteed to withstand a specified level of energy in the br |
 nELL |
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| 46 | IRF730 | N-Channel MOSFET Transistor MOSFET
IRF730
N-channel mosfet transistor
INCHANGE
Features
With TO-220 package Simple drive requirements Fast switching V DSS=400V; RDS(ON)1.0 ;I 1.gate 2.drain 3.source
D=5.5A
Absolute Maximum Ratings Tc=25
SYMBOL
PARAMETER
RATING UNIT
VDSS
Drain-source voltage (VGS=0)
400 V
VGS |
 Inchange Semiconductor |
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| 45 | IRF730 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics Corp.
▼ Ease of Paralleling ▼ Fast Switching Characteristic ▼ Simple Drive Requirement
IRF730
RoHS-compliant Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D BVDSS
400V
RDS(ON)
1Ω
G ID 5.5A
S
Description
APEC MOSFET provide the power designer with the best |
 Advanced Power Electronics |
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