No | Part number | Description ( Function ) | Manufacturers | |
1 | IRF7103QPBF | Power MOSFET ( Transistor ) PD - 96101C IRF7103QPbF Benefits l Advanced Process Technology l Dual N-Channel MOSFET l Ultra Low On-Resistance l 175°C Operating Temperature l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional featur |
International Rectifier |
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Recommended search results related to IRF7103QPBF |
Part No | Description ( Function) | Manufacturers | |
AUIRF7103Q | Dual N Channel MOSFET AUTOMOTIVE GRADE AUIRF7103Q Features Advanced Planar Technology Dual N Channel MOSFET Low On-Resistance Logic Level Gate Drive Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead- |
Infineon |
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AUIRF7103Q | Power MOSFET ( Transistor ) Features l Advanced Planar Technology l Dual N Channel MOSFET l Low On-Resistance l Dynamic dV/dT Rating l 175°C Operating Temperature l Fast Switching l Lead-Free, RoHS Compliant l Automotive Qualified* AUTOMOTIVE GRADE AUIRF7103Q HEXFET® Power MOSFET S1 1 G1 2 S2 3 G2 4 8 |
International Rectifier |
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IRF7103 | Power MOSFET(Vdss=50V/ Rds(on)=0.130ohm/ Id=3.0A) PD - 9.1095B IRF7103 HEXFET® Power MOSFET l l l l l l l Adavanced Process Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching S1 G1 S2 G2 1 8 D1 D1 D2 D2 2 7 VDSS = 50V RDS(on) = 0.130Ω ID |
International Rectifier |
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IRF7103PBF | HEXFET Power MOSFET IRF7103PbF l l l l l l l l PD -95037A Adavanced Process Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching Lead-Free HEXFET® Power MOSFET S1 G1 S2 G2 1 2 8 7 D1 D1 D2 D2 VDSS = 50V RDS(on) = 0. |
International Rectifier |
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IRF7103Q | Power MOSFET(Vdss=50V) PD - 93944C AUTOMOTIVE MOSFET Typical Applications q q q IRF7103Q HEXFET® Power MOSFET Anti-lock Braking Systems (ABS) Electronic Fuel Injection Power Doors, Windows & Seats Advanced Process Technology Dual N-Channel MOSFET Ultra Low On-Resistance 175°C Operating Temperature |
International Rectifier |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |