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Datasheet IRF710 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 26 | IRF710 | 2.0A/ 400V/ 3.600 Ohm/ N-Channel Power MOSFET IRF710
Data Sheet June 1999 File Number
2310.3
2.0A, 400V, 3.600 Ohm, N-Channel Power MOSFET
This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche |
 Intersil Corporation |
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| 25 | IRF710 | N-Channel Power MOSFETs/ 2.25A/ 350-400V |
 Fairchild Semiconductor |
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| 24 | IRF710 | Trans MOSFET N-CH 400V 2A 3-Pin(3+Tab) TO-220AB |
 New Jersey Semiconductor |
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| 23 | IRF710 | Power MOSFET ( Transistor ) Power MOSFET
IRF710, SiHF710
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
400 VGS = 10 V
17 3.4 8.5 Single
D
TO-220AB
3.6
S D G
G
S N-Channel MOSFET
ORDERING INFORMATION
Package Lead (Pb)-free
SnPb
FEATURES • Dynamic dV/dt Rating |
 Vishay |
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