| No | Part number | Description ( Function ) | Manufacturers | |
| 1 | IRF6729MTRPBF | Power MOSFET ( Transistor ) PD - 96229 HEXFET® Power MOSFET plus Schottky Diode RoHs Compliant and Halogen-Free VDSS VGS RDS(on) RDS(on) l Integrated Monolithic Schottky Diode 30V max ±20V max 1.4mΩ@ 10V 2.2mΩ@ 4.5V l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) l Ultra Low Package Inductance 42nC 14nC 4.9nC 40nC 29nC 1.8V l Optimized for High Freq |
 International Rectifier |
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| Part No | Description ( Function) | Manufacturers | |
| IRF6729MPBF | Power MOSFET ( Transistor ) PD - 96229 HEXFET® Power MOSFET plus Schottky Diode RoHs Compliant and Halogen-Free VDSS VGS RDS(on) RDS(on) l Integrated Monolithic Schottky Diode 30V max ±20V max 1.4mΩ@ 10V 2.2mΩ@ 4.5V l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible Qg tot Qgd Qgs2 Qrr |
International Rectifier |
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| 2N6729 | PNP SILICON PLANAR MEDIUM POWER TRANSISTORS PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 1 MARCH 94 FEATURES * 100 Volt VCEO * Gain of 20 at IC = 0.5 Amp * Ptot=1 Watt 2N6728 2N6729 2N6730 C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse |
 ETC |
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| 2N6729 | (2N6716 - 2N6730) Silicon Power Transistors 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 |
 Central Semiconductor |
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| BM67290FV-C | High Voltage Detection IC For Electric Cars & Hybrid Cars Isolation Voltage 2,500Vrms High Voltage Detection IC BM67290FV-C General Description This is a voltage detector IC for DC-DC converter. Aside from being capable of converting input voltage to duty, it has built in protection functions against lo |
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| CR6729A | Triple video driver hybrid amplifier DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D299 CR6729A Triple video driver hybrid amplifier Product specification Supersedes data of 1998 Aug 06 1998 Sep 21 Philips Semiconductors Product specification Triple video driver hybrid amplifier FEATURES • Transitio |
 NXP Semiconductors |
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| 1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
 Vishay |
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 ON Semiconductor |
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