No | Part number | Description ( Function ) | Manufacturers | |
1 | IRF6727MPBF | Power MOSFET ( Transistor ) PD - 96122 IRF6727MPbF IRF6727MTRPbF l l l l l l l l l l RoHS Compliant Containing No Lead and Bromide Low Profile (<0.7 mm) Dual Sided Cooling Compatible Ultra Low Package Inductance Optimized for High Frequency Switching Ideal for CPU Core DC-DC Converters Optimized for both Sync.FET and some Control FET application Low Conduction and Switching Losses Compatible |
International Rectifier |
0  1  2  3  4  5  6  7  8 9 |
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IRF6727MTRPBF | Power MOSFET ( Transistor ) PD - 96122 IRF6727MPbF IRF6727MTRPbF l l l l l l l l l l RoHS Compliant Containing No Lead and Bromide Low Profile (<0.7 mm) Dual Sided Cooling Compatible Ultra Low Package Inductance Optimized for High Frequency Switching Ideal for CPU Core DC-DC Converters Optimized |
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2N6727 | PNP SILICON PLANAR MEDIUM POWER TRANSISTORS PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 1 MARCH 94 FEATURES * 40 Volt VCEO * Gain of 50 at IC = 1 Amp * Ptot=1 Watt 2N6726 2N6727 C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Co |
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2N6727 | TO-92 Plastic-Encapsulated Transistors Transys Electronics LIMITED TO-92 Plastic-Encapsulated Transistors 2N6727 TRANSISTOR (PNP) FEATURES Power dissipation PCM : 1 W(Tamb=25℃) Collector current ICM : -1.5 A Collector-base voltage V(BR)CBO : -50 V Operating and storage junction temperature range TJ, Tstg: -55℃ to |
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