No | Part number | Description ( Function ) | Manufacturers | |
2 | IRF646 | N-Channel Mosfet Transistor INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification IRF646 ·FEATURES ·14A, 275V ·RDS(ON) = 0.280Ω ·Single Pulse Avalanche Energy Rated ·SOA is Power Dissipation Limited ·Nanosecond Switching Speeds ·High Input Impedance ·275V DC Rating-120V AC Line System Operation ·DESCRITION ·designed for applications such as switching regulators, swi |
Inchange Semiconductor |
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1 | IRF646 | 14A/ 275V/ 0.280 Ohm/ N-Channel Power MOSFET IRF646 Data Sheet June 1999 File Number 2169.3 14A, 275V, 0.280 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such |
Intersil Corporation |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |