No | Part number | Description ( Function ) | Manufacturers | |
2 | IRF644A | N-Channel Mosfet Transistor INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification IRF644A ·FEATURES ·Avalanche Rugged Technology ·Rugged Gate Oxide Technology ·Lower Input Capacitance ·Improved Gate Charge ·Extended Safe Operating Area ·Lower Leakage Current: 10mA (Max.) @ VDS = 250V ·Lower RDS(ON): 0.214Ω (Typ.) ·DESCRITION ·Designed especially for high voltage,hig |
Inchange Semiconductor |
|
1 | IRF644A | Advanced Power MOSFET $GYDQFHG 3RZHU 026)(7 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 250V ♦ Lower RDS(ON): 0.214Ω (Typ.) 1 2 3 IRF644A BVDSS = 250 V RDS(on) = 0.28Ω ID = 14 A TO-220 1.Gate 2. Drain 3. Sourc |
Fairchild Semiconductor |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |