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IRF640NSPBF PDF Datasheet

The IRF640NSPBF is Power MOSFET ( Transistor ). It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 IRF640NSPBF
Power MOSFET ( Transistor )

l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements Dl esLceraidp-tFiorene Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, com

International Rectifier
International Rectifier
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Part No Description ( Function) Manufacturers PDF
IRF640   N-channel TrenchMOS transistor

Philips Semiconductors Product specification N-channel TrenchMOS™ transistor IRF640, IRF640S FEATURES • ’Trench’ technology • Low on-state resistance • Fast switching • Low thermal resistance SYMBOL d QUICK REFERENCE DATA VDSS = 200 V ID = 16 A g RDS(ON) ≤

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IRF640   N-CHANNEL 200V, 18A, MOSFET ( TO-220/TO-220FP )

® IRF640 IRF640FP N - CHANNEL 200V - 0.150Ω - 18A TO-220/TO-220FP MESH OVERLAY™ MOSFET TYPE IRF640 IRF640FP s s s s V DSS 200 V 200 V R DS(on) < 0.18 Ω < 0.18 Ω ID 18 A 18 A TYPICAL RDS(on) = 0.150 Ω EXTREMELY HIGH dV/dt CAPABILITY VERY LOW INTRINSIC CAPACITANCES

STMicroelectronics
STMicroelectronics
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IRF640   Power MOSFET(Vdss=200V/ Rds(on)=0.18ohm/ Id=18A)

International Rectifier
International Rectifier
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IRF640   200V N-Channel MOSFET

IRF640, RF1S640, RF1S640SM Data Sheet January 2002 18A, 200V, 0.180 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of e

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IRF640   N-Channel Enhancement Mode Power MOS Transistors

SEMICONDUCTORS IRF640 N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS FEATURE N channel in a plastic TO220 package. They are intended for use in high speed power switching, low voltage, relay drivers and general purpose switching applications. DC-DC & DC-AC converters for telec

Comset Semiconductors
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