No | Part number | Description ( Function ) | Manufacturers | |
1 | IRF640NSPBF | Power MOSFET ( Transistor ) l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements Dl esLceraidp-tFiorene Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, com |
International Rectifier |
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IRF640 | N-CHANNEL 200V, 18A, MOSFET ( TO-220/TO-220FP ) ® IRF640 IRF640FP N - CHANNEL 200V - 0.150Ω - 18A TO-220/TO-220FP MESH OVERLAY™ MOSFET TYPE IRF640 IRF640FP s s s s V DSS 200 V 200 V R DS(on) < 0.18 Ω < 0.18 Ω ID 18 A 18 A TYPICAL RDS(on) = 0.150 Ω EXTREMELY HIGH dV/dt CAPABILITY VERY LOW INTRINSIC CAPACITANCES |
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IRF640 | Power MOSFET(Vdss=200V/ Rds(on)=0.18ohm/ Id=18A) |
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IRF640 | 200V N-Channel MOSFET IRF640, RF1S640, RF1S640SM Data Sheet January 2002 18A, 200V, 0.180 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of e |
Fairchild Semiconductor |
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IRF640 | N-Channel Enhancement Mode Power MOS Transistors SEMICONDUCTORS IRF640 N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS FEATURE N channel in a plastic TO220 package. They are intended for use in high speed power switching, low voltage, relay drivers and general purpose switching applications. DC-DC & DC-AC converters for telec |
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Vishay |
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